Stacked memory module and system

ABSTRACT

A three dimensional memory module and system are formed with at least one slave chip stacked over a master chip. Through semiconductor vias (TSVs) are formed through at least one of the master and slave chips. The master chip includes a memory core for increased capacity of the memory module/system. In addition, capacity organizations of the three dimensional memory module/system resulting in efficient wiring is disclosed for forming multiple memory banks, multiple bank groups, and/or multiple ranks of the three dimensional memory module/system.

CROSS-REFERENCE TO RELATED APPLICATION(S)

The present application is a divisional of an earlier filed patentapplication with Ser. No. 12/454,064 filed on May 12, 2009 now U.S. Pat.No. 8,031,505, for which priority is claimed. This earlier filedcopending patent application with Ser. No. 12/454,064 is in its entiretyincorporated herewith by reference.

The present application also claims priority under 35 USC §119 to KoreanPatent Application No. 2008-0072904 filed on Jul. 25, 2008 and to KoreanPatent Application No. 2008-0125338 filed on Dec. 10, 2008, in theKorean Intellectual Property Office, the disclosures of which isincorporated herein in its entirety by reference. Certified copies ofKorean Patent Application No. 2008-0072904 and Korean Patent ApplicationNo. 2008-0125338 are contained in the parent copending patentapplication with Ser. No. 12/454,064.

TECHNICAL FIELD

The present invention relates generally to memory systems, and moreparticularly, to a three dimensional stacked memory system with highmemory capacity and having efficient wiring and capacity organizationfor multiple memory banks, bank groups and/or ranks formed in the memorysystem.

BACKGROUND OF THE INVENTION

The area occupied by an integrated circuit device is desired to beminimized for being used in smaller portable electronic devices.Accordingly, a three dimensional stacked memory device is formed in theprior art for minimizing the area occupied by the memory device.

For example, U.S. Pat. No. 6,133,640 to Leedy discloses a memory devicewith multiple memory cell arrays stacked on top of a memory controller.However, Leedy just discloses one three dimensional memory device andnot a three dimensional memory module/system.

U.S. Pat. No. 6,768,163 to Tanaka et al. discloses a first semiconductorsubstrate with a memory cell array stacked on a second semiconductorsubstrate having a word line control circuit to control the word linesof the memory cell array. Tanaka also discloses one three dimensionalmemory device and not a three dimensional memory module/system.

In addition, Tanaka discloses the integrated circuit package with thestacked semiconductor substrates having vertical terminals disposed onthe outside periphery of the substrates. Such vertical terminalsdisposed on the outside periphery of the substrates disadvantageouslyincrease the area occupied the three dimensional memory device ofTanaka.

U.S. Pat. No. 7,123,497 to Matsui et al. discloses multiple DRAM(dynamic random access memory) chips stacked on top of an IO (inputoutput) chip. TSVs (through semiconductor vias) are formed through suchchips for interconnection among such chips. TSVs are vertical electricalconnections formed to pass completely though the semiconductor substrateof the stacked chips. However, Matsui is directed to using the IO chiponly for conversion of data width and transfer rate during transfer ofdata to/from the DRAM chips.

SUMMARY OF THE INVENTION

In a general aspect of the present invention, a three dimensional memorymodule/system is formed with a stack of slave and master chips with highmemory capacity and efficient wiring and capacity organization formultiple memory banks, bank groups and/or ranks formed in the memorymodule/system.

In an aspect of the present invention, a three dimensional memory systemincludes a master chip, at least one slave chip, and through electrodes.The master chip has a master memory core formed therein. The at leastone slave chip is stacked with the master chip, and each slave chip hasa respective slave memory core. The through electrodes are formedthrough the at least one slave chip.

In an embodiment of the present invention, the slave and master memorycores form a total memory capacity of the three dimensional memorysystem.

In another embodiment of the present invention, the slave and mastermemory cores form at least one memory bank, bank group, or rank of thethree dimensional memory system.

In a further embodiment of the present invention, the through electrodesare formed onto the master chip and not through the master chip when themaster chip is formed faced up over a substrate.

In another embodiment of the present invention, the master chip isformed faced down over a substrate. In that case, the through electrodesare formed through the master chip.

In a further embodiment of the present invention, the through electrodesare aligned along at least one row formed across a center area of themaster chip with interconnections extending from the through electrodesto at least one memory bank of the master memory core. In that case, thethree dimensional memory system further includes an I/O circuit disposedon the master chip between rows of the through electrodes.Alternatively, the three dimensional memory system includes at least onerow of I/O pads formed on the master chip to be parallel to the row ofthrough electrodes, and the I/O pads are coupled to an I/O circuit ofthe master chip.

In another embodiment of the present invention, the three dimensionalmemory system includes a respective test circuit disposed on each of themaster and slave chips between rows of the through electrodes.

In a further embodiment of the present invention, the three dimensionalmemory system includes a substrate having external terminals forproviding external signals to the master chip that is formed faced downover the substrate.

In another embodiment of the present invention, the three dimensionalmemory system includes first, second, and third interfaces. The firstinterface is formed between a first I/O unit in the master chip and anexternal device. The second interface is formed between the first I/Ounit and a respective second I/O unit in each of the master and slavechips. The third interface is formed between each of the second I/Ounits and a respective one of the slave and master memory cores.

In an example embodiment of the present invention, the three dimensionalmemory system includes a respective state circuit for indicating arespective command execution state for each of the slave and mastermemory cores, with each state circuit being disposed in a respective oneof the slave and master chips. In that case, the three dimensionalmemory system also includes a tracking circuit disposed in the masterchip for controlling the first I/O unit depending on the respectivecommand execution states of the slave and master memory cores asindicated by the respective state circuits.

In another embodiment of the present invention, the three dimensionalmemory system includes a master state circuit and a tracking circuit.The master state circuit is disposed in the master chip for indicating arespective command execution state for each of the slave and mastermemory cores. The tracking circuit is disposed in the master chip forcontrolling the first I/O unit depending on the respective commandexecution states of the slave and master memory cores as indicated bythe master state circuit.

In a further embodiment of the present invention, the three dimensionalmemory system includes a plurality of slave chips stacked over themaster chip, with each slave chip having a respective slave memory core.At least one memory bank, bank group, or rank of the three dimensionalmemory system is formed with a respective portion of each of the stackedslave chips. For example, at least one memory bank, bank group, or rankof the three dimensional memory system is formed with a respectiveportion of each of the stacked slave and master chips.

In another aspect of the present invention, a three dimensional memorysystem includes a plurality of stacked integrated circuit chips and aplurality of bank groups or a plurality of ranks formed with at leastone of the stacked integrated circuit chips. For example, the stackedintegrated circuit chips include a master chip and at least one slavechip stacked with the master chip.

In an example embodiment of the present invention, the three dimensionalmemory system includes a respective separate data bus formed for eachbank group as part of a master internal data bus.

In a further embodiment of the present invention, the three dimensionalmemory system includes a respective set of unidirectional read and writedata buses formed for each rank as part of a master internal data bus.

In another embodiment of the present invention, the three dimensionalmemory system includes first and second bank groups. The first bankgroup is comprised of a first set of memory banks extending verticallythrough the stack integrated circuits. The second bank group iscomprised of a second set of memory banks extending vertically throughthe stack integrated circuits.

In that case, the three dimensional memory system further includes firstand second through electrodes. The first through electrode extendsthrough at least a portion of the stack integrated circuits for couplingamong the first set of memory banks. The second through electrodeextends through at least a portion of the stack integrated circuits forcoupling among the second set of memory banks.

In another aspect of the present invention, a three dimensional memorysystem includes a master chip, at least one slave chip stacked with themaster chip, through electrodes formed through the at least one slavechip, an external data bus that is bidirectional or unidirectional, anda master internal data bus. The master internal data bus isbidirectional when one rank is formed in the stacked chips, oralternatively includes unidirectional read and write buses when aplurality of ranks are formed in the stacked chips, when the externaldata bus is bidirectional.

In an embodiment of the present invention, the master internal data busincludes unidirectional read and write buses for any number of ranksformed in the stacked chips when the external data bus isunidirectional.

In another embodiment of the present invention, the master internal databus includes a respective separate data bus formed for each bank groupwhen a plurality of bank groups are formed in the stacked chips.

In a further embodiment of the present invention, the three dimensionalmemory system includes a slave internal data bus that is bidirectionalwhen the external data bus is either bidirectional or unidirectional.

In another embodiment of the present invention, the three dimensionalmemory system includes a slave internal data bus that is bidirectionalwhen one rank or a plurality of ranks are formed in the stacked chips.

In an alternative embodiment of the present invention, the threedimensional memory system includes a slave internal data bus that isbidirectional when one bank group or a plurality of bank groups areformed in the stacked chips.

In another aspect of the present invention, a three dimensional memorysystem includes a first type chip, a plurality of second type chipsstacked with the first type chip, and through electrodes formed throughat least one of the second type chips. The three dimensional memorysystem further includes a first signal path disposed on the first typechip and a respective second signal path disposed on each second typechip. In that case, the first signal path is coupled to the respectivesecond signal paths via the through electrodes. In addition, a firstlength of the first signal path is maximized and a second length of eachrespective second signal path is minimized.

In an embodiment of the present invention, the first type chip is amaster chip, and the plurality of the second type chips are a pluralityof slave chips stacked with the master chip.

In that case, the first signal path is for transmitting a first signalfrom an external source through the master chip, and the second signalpath is for transmitting a second signal from one of the throughelectrodes to the slave chip.

In an example embodiment of the present invention, the first length ofthe first signal path is greater than the second length of the secondsignal path.

In another aspect of the present invention, a memory system includes amemory controller and a three dimensional memory module. The threedimensional memory module includes a master chip, at least one slavechip stacked with the master chip, and through electrodes. The masterchip has a master memory core, and each slave chip has a respectiveslave memory core. The through electrodes are formed through the atleast one slave chip. The memory controller and the master chip exchangeat least one of command, address, and data signals. In an embodiment ofthe present invention, the slave and master memory cores form a totalmemory capacity of the three dimensional memory module.

In an example embodiment of the present invention, the slave and mastermemory cores form at least one memory bank, bank group, or rank of thethree dimensional memory module. In that case, the memory controllertransmits a respective bank group address to the master chip to accesseach bank group, and transmits a respective bank address to the masterchip to access each memory bank.

In a further embodiment of the present invention, the memory controlleractivates a respective chip select signal sent to the master chip foraccessing each rank when the memory controller and the master chip arecoupled via a bidirectional data bus.

In another embodiment of the present invention, the memory controllertransmits a respective rank identification unit within a frame sent tothe master chip for accessing each rank when the memory controller andthe master chip are coupled via a unidirectional data bus.

In a further embodiment of the present invention, the three dimensionalmemory module further includes first, second, and third interfaces. Thefirst interface is coupled between a first I/O unit in the master chipand the memory controller. The second interface is coupled between thefirst I/O unit and a respective second I/O unit in each of the masterand slave chips. The third interface is coupled between each of thesecond I/O units and a respective one of the slave and master memorycores.

In another embodiment of the present invention, the memory moduleincludes a respective state circuit and a tracking circuit. Therespective state circuit indicates a respective command execution statefor each of the slave and master memory cores, and each state circuit isdisposed in a respective one of the slave and master chips. The trackingcircuit is disposed in the master chip for controlling the first I/Ounit depending on the respective command execution states of the slaveand master memory cores as indicated by the respective state circuits.

In a further embodiment of the present invention, the memory moduleincludes a master state circuit and a tracking circuit. The master statecircuit is disposed in the master chip for indicating a respectivecommand execution state for each of the slave and master memory cores.The tracking circuit is disposed in the master chip for controlling thefirst I/O unit depending on the respective command execution states ofthe slave and master memory cores as indicated by the master statecircuit.

In this manner, by forming a master memory core in the master chip forforming the total memory capacity of the memory module with the slavememory cores, the capacity of the memory module is increased. Inaddition, the memory capacity is organized to have multiple memorybanks, bank groups and/or ranks for efficient wiring.

These and other features and advantages of the present invention will bebetter understood by considering the following detailed description ofthe invention which is presented with the attached drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a cross-sectional view of a three dimensional memorymodule, according to an example embodiment of the present invention;

FIG. 2 shows a block diagram of a three dimensional memory systemincluding the three dimensional memory module of FIG. 1, according to anexample embodiment of the present invention;

FIG. 3 shows a block diagram of a three dimensional memory systemincluding the three dimensional memory module of FIG. 1, according toanother embodiment of the present invention;

FIG. 4 shows a top view of a slave chip in the three dimensional memorymodule of FIG. 1, according to an example embodiment of the presentinvention;

FIG. 5 shows a top view of a slave chip in the three dimensional memorymodule of FIG. 1, according to another example embodiment of the presentinvention;

FIG. 6 shows a top view of a master chip in the three dimensional memorymodule of FIG. 1, according to an example embodiment of the presentinvention;

FIG. 7 shows a cross-sectional view of a three dimensional memory modulewith a master chip being faced down, according to an example embodimentof the present invention;

FIGS. 8A, 8B, 8C, and 8D illustrate capacity organization for the threedimensional memory system having multiple memory banks, bank groups,and/or ranks, according to an example embodiment of the presentinvention;

FIG. 9 shows a block diagram of a memory system having multiple memorybanks with a bidirectional external data bus, according to an exampleembodiment of the present invention;

FIG. 10 shows a block diagram of a memory system having multiple bankgroups with a bidirectional external data bus, according to an exampleembodiment of the present invention;

FIG. 11 shows a block diagram of a memory system having multiple bankgroups with unidirectional external data buses, according to anotherembodiment of the present invention;

FIG. 12 shows a further block diagram of components in a slave chip anda master chip in the three dimensional memory module of FIG. 1 with abidirectional external data bus, according to an example embodiment ofthe present invention;

FIG. 13 shows a further block diagram of components in a slave chip anda master chip in the three dimensional memory module of FIG. 1 withunidirectional external data buses, according to another embodiment ofthe present invention;

FIGS. 14, 15, and 16 are timing diagrams illustrating advantageous useof unidirectional data buses in the master chip when multiple ranks areformed in the three-dimensional memory system, according to an exampleembodiment of the present invention;

FIGS. 17 and 18 are timing diagrams illustrating advantageous use ofseparate buses for each bank group when multiple bank groups are formedin a rank for the three-dimensional memory system, according to anexample embodiment of the present invention;

FIGS. 19 and 20 illustrate maximizing wiring length in a master chipwhile minimizing wiring length in a slave chip in the three dimensionalmemory module of FIG. 1, according to an example embodiment of thepresent invention;

FIGS. 21 and 22 illustrate minimizing wiring length in a master chipwhile maximizing wiring length in a slave chip alternatively to FIGS. 19and 20;

FIG. 23 shows a table of unidirectional or bidirectional internal databuses to be formed in a master area and a slave area depending on typeof external data bus, the number of ranks, and the number of bank groupsin the three dimensional memory module of FIG. 1, according to anexample embodiment of the present invention;

FIGS. 24 and 25 illustrate wirings formed through a master chip and aslave chip when one rank and one bank group are formed in the threedimensional memory module of FIG. 1, according to an example embodimentof the present invention;

FIGS. 26 and 28 illustrate wirings formed through a master chip and aslave chip when one rank and multiple bank groups are formed in thethree dimensional memory module of FIG. 1 with a bidirectional externaldata bus, according to an example embodiment of the present invention;

FIGS. 27 and 29 illustrate wirings formed through a master chip and aslave chip when multiple ranks and one bank group are formed in thethree dimensional memory module of FIG. 1 with each rank being formed ina respective chip, according to an example embodiment of the presentinvention;

FIGS. 30 and 33 illustrate wirings formed through a master chip and aslave chip when multiple ranks and multiple bank groups are formed inthe three dimensional memory module of FIG. 1 for a bidirectionalexternal data bus or unidirectional external data buses, according to anexample embodiment of the present invention;

FIGS. 25 and 34 illustrate wirings formed through a master chip and aslave chip when one rank and one bank group are formed in the threedimensional memory module of FIG. 1 with unidirectional external databuses, according to an example embodiment of the present invention;

FIGS. 26 and 35 illustrate wirings formed through a master chip and aslave chip when one rank and multiple bank groups are formed in thethree dimensional memory module of FIG. 1 with unidirectional externaldata buses, according to an example embodiment of the present invention;

FIG. 36 illustrates connection between an external data pad for abidirectional external data bus and components in a master chip in thethree dimensional memory module of FIG. 1, according to an exampleembodiment of the present invention;

FIG. 37 illustrates connection between external data pads forunidirectional external data buses and components in a master chip inthe three dimensional memory module of FIG. 1, according to an exampleembodiment of the present invention;

FIG. 38 illustrates an additional gating controller included in thethree dimensional memory module of FIG. 1, according to an exampleembodiment of the present invention;

FIGS. 31 and 39 illustrate wirings formed through a master chip and aslave chip when one rank and multiple bank groups are formed, with amemory bank extending through multiple chips in the three dimensionalmemory module of FIG. 1, according to an example embodiment of thepresent invention; and

FIGS. 32 and 40 illustrate wirings formed through a master chip and aslave chip when multiple ranks and one bank group are formed in thethree dimensional memory module of FIG. 1, according to an exampleembodiment of the present invention.

The figures referred to herein are drawn for clarity of illustration andare not necessarily drawn to scale. Elements having the same referencenumber in FIGS. 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16,17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34,35, 36, 37, 38, 39, and 40 refer to elements having similar structureand/or function, unless stated other-wise.

DETAILED DESCRIPTION

FIG. 1 shows a cross-sectional view of a three dimensional memory module100, according to an example embodiment of the present invention. Amemory module is broadly defined as an integrated circuit package formedwith multiple integrated circuit memory dies (i.e., integrated circuitmemory chips) with controlled access to the multiple memory dies.Referring to FIG. 1, the three dimensional memory module 100 includes amaster chip 102 mounted on a substrate 104. In addition, a plurality ofslave chips 106, 108, and 110 are stacked over the master chip 102.

A first slave chip 106 is stacked over the master chip 102, a secondslave chip 108 is stacked over the first slave chip 106, and a thirdslave chip 110 is stacked over the second slave chip 108. However, thepresent invention may be practiced with any number of slave chipsstacked over any number of the master chip 102.

The three dimensional memory module 100 further includes first TSVs(through semiconductor vias, i.e., through electrodes) 112 formedthrough the slave chips 106, 108, and 110. Such TSVs are formedcompletely through respective semiconductor substrates of the slavechips 106, 108, and 110. In addition, second TSVs (through semiconductorvias) 114 are formed completely through a respective semiconductorsubstrate of the master chip 102.

Furthermore, first internal electrodes 116 are formed at a first face FAof the master chip 102, and second internal electrodes 118 are formed ona second face FB of the master chip 102. External terminals 120 connectthe internal electrodes 118 of the master chip 102 to interconnects 122of the substrate 104.

Such interconnect structures 112, 114, 116, 118, 120, and 122 provideelectrical connection between the master chip 102, the slave chips 106,108, and 110, and a memory controller 130 (shown in FIG. 2) outside ofthe three dimensional memory module 100. The master chip 102 controlsread and write operations in respective memory cores of the master chip102 and the slave chips 106, 108, and 110. The external terminals 120provide external signals such as command, address, and data signals fromthe memory controller 130 outside of the memory module 100 to the masterchip 102.

FIG. 2 shows a block diagram of a three dimensional memory systemincluding the memory controller 130 and the three dimensional memorymodule 100 of FIG. 1 with the master chip 102 and the slave chips 106,108, and 110, according to an example embodiment of the presentinvention. The memory controller 130 (shown outlined in dashed lines inFIG. 2) is disposed outside of the three dimensional memory module 100.The master chip 102 includes an external I/O (input/output) 132 forforming a first interface between the memory controller 130 and each ofthe master chip 102 and the slave chips 106, 108, and 110.

The master chip 102 includes a master memory core 134, and the slavechips 106, 108, and 110 include respective slave memory cores 136, 138,and 140, respectively. In addition, a master I/O (input/output) 144 iscoupled between the external I/O 132 and the master memory core 134. Afirst slave I/O (input/output) 146 is coupled between the external I/O132 and the slave memory core 136 in the first slave chip 106. A secondslave I/O (input/output) 148 is coupled between the external I/O 132 andthe slave memory core 138 in the second slave chip 108. A third slaveI/O (input/output) 150 is coupled between the external I/O 132 and theslave memory core 140 in the third slave chip 110.

A first interface is formed between the external I/O 132 and the memorycontroller 130 that is an example external device formed outside of thethree dimensional memory module 100. A second interface is formedbetween the external I/O 132 and each of the master and slave I/Os 144,146, 148, and 150. A third interface is formed between the master andslave I/Os 144, 146, 148, and 150 and the respective master and slavememory cores 134, 136, 138, and 140, respectively.

In addition, the master and slave chips 102, 106, 108, and 110 includerespective state circuits 152, 156, 158, and 160, respectively.Furthermore, the master chip 102 includes a tracking circuit 162. Therespective state circuits 152, 156, 158, and 160 indicate a respectivecommand execution state for the master and slave cores 134, 136, 138,and 140, respectively. The respective command execution state indicateswhether a respective command such as a read, write, active, or refreshcommand has been executed by the respective memory core.

A command from the memory controller 130 is received by the external I/O132 that decodes such a command to control one of the master and slaveI/Os 144, 146, 148, and 150 to execute the command in a respective oneof the master and slave memory cores 134, 136, 138, and 140. The stateof execution of such a command is indicated by a respective one of thestate circuits 152, 156, 158, and 160 to the tracking circuit 162. Thetracking circuit 162 is coupled to the external I/O 132 to control theexternal I/O 132 to process another command from the memory controller130 depending on such a state of execution of the prior command.

Further in FIG. 2, a first interconnect structure 164 comprised of atleast one TSV (through semiconductor via, i.e., through electrode) isformed through the semiconductor substrates of the master and slavechips 102, 106, 108, and 110 for the external I/O 132 sending signals tothe master and slave I/Os 144, 146, 148, and 150. A second interconnectstructure 166 comprised of at least one TSV (through semiconductor via,i.e., through electrode) is formed through the semiconductor substratesof the master and slave chips 102, 106, 108, and 110 for the master andslave 1/Os 144, 146, 148, and 150 to send signals to the external I/O132. A third interconnect structure 168 comprised of at least one TSV(through semiconductor via, i.e., through electrode) is formed throughthe semiconductor substrates of the master and slave chips 102, 106,108, and 110 for the state circuits 152, 156, 158, and 160 indicatingthe respective command execution states to the tracking circuit 162.

FIG. 3 shows a block diagram of a three dimensional memory systemincluding the memory controller 130 and the three dimensional memorymodule 100 of FIG. 1, according to another embodiment of the presentinvention. The block diagram of FIG. 3 is similar to FIG. 2 except thatthe slave chips 106, 108, and 110 in FIG. 3 do not have the respectivestate circuits 156, 158 and 160 of FIG. 2. Instead, the master chip 102includes a master state circuit 170 coupled to the external I/O 132 forindicating to a tracking circuit 172 the respective command executionstate for each of the master and slave memory cores 134, 136, 138, and140 from the commands generated from the external I/O 132.

A tracking circuit 172 is coupled to the external I/O 132 to control theexternal I/O 132 to process another command from the memory controller130 depending on the state of execution of a prior command as indicatedby the master state circuit 170. In the embodiment of FIG. 3, the thirdinterconnect structure 168 of FIG. 2 is not present to minimize thenumber of TSVs (through semiconductor vias).

FIG. 4 shows a top view of an example one 106 of the slave chips 106,108, and 110 in the three dimensional memory module 100 of FIG. 1,according to an example embodiment of the present invention. The slavechip 106 includes a first memory bank 174, a second memory bank 176, athird memory bank 178, and a fourth memory bank 180 of memory cellsforming the memory core 136 of the slave chip 106.

FIG. 4 also shows a first TSV (through semiconductor via) area 182having a plurality of TSVs (through semiconductor vias) 186 formed inparallel through the respective semiconductor substrates of the slavechips 106, 108, and 110. In addition in FIG. 4, a second TSV (throughsemiconductor via) area 184 has a plurality of TSVs (throughsemiconductor vias) 188 formed in parallel through the respectivesemiconductor substrates of the slave chips 106, 108, and 110.

A first internal interconnect 192 is formed from a TSV (throughsemiconductor via) of the first TSV area 182 to at least one node of thefirst memory bank 174 that is disposed near the first TSV area 182. Theterm “internal interconnect” refers to the interconnect being formedduring fabrication of the chip 106 that is subsequently stacked withinthe three dimensional memory module 100.

Similarly referring to 4, a second internal interconnect 194 is formedfrom a TSV (through semiconductor via) of the second TSV area 184 to atleast one node of the second memory bank 176 that is disposed near thesecond TSV area 184. Also, a third internal interconnect 196 is formedfrom another TSV (through semiconductor via) of the first TSV area 182to at least one node of the third memory bank 178 that is disposed nearthe first TSV area 182. Further, a fourth internal interconnect 198 isformed from another TSV (through semiconductor via) of the second TSVarea 184 to at least one node of the fourth memory bank 180 that isdisposed near the second TSV area 184.

FIG. 5 shows a top view of an example one 106 of the slave chips 106,108, and 110 in the three dimensional memory module 100 of FIG. 1,according to another example embodiment of the present invention. FIG. 5includes the similarly numbered elements of FIG. 4, but FIG. 5 furtherincludes a center area 200 between the first and second TSV areas 182and 184 having a core test circuit 202 for testing the memory banks 174,176, 178, and 180. The core test circuit 202 is connected to test pads204 in a test pad area 206 and to the TSVs 186 and 188 for being coupledto the memory banks 174, 176, 178, and 180. External test signals from atest system may be applied on the test pads 204. A respective testcircuit 202 may be formed in a respective center area 200 of each of themaster and slave chips 102, 106, 108, and 110.

FIG. 6 shows a top view of the master chip 102 in the three dimensionalmemory module 100 of FIG. 1, according to an example embodiment of thepresent invention. The master chip 102 includes a first memory bank 212,a second memory bank 214, a third memory bank 216, and a fourth memorybank 218 of memory cells forming the memory core 134 of the master chip102.

FIG. 6 also shows a first TSV (through semiconductor via) area 222having a plurality of TSVs (through semiconductor vias) 223 formed inparallel through the semiconductor substrate of the master chip 102. Inaddition in FIG. 6, a second TSV (through semiconductor via) area 224has a plurality of TSVs (through semiconductor vias) 225 formed inparallel through the semiconductor substrate of the master chip 102.

A first internal interconnect 232 is formed from a TSV (throughsemiconductor via) of the first TSV area 222 to at least one node of thefirst memory bank 212 that is disposed near the first TSV area 222.Similarly, a second internal interconnect 234 is formed from a TSV(through semiconductor via) of the second TSV area 224 to at least onenode of the second memory bank 214 that is disposed near the second TSVarea 224. Also, a third internal interconnect 236 is formed from anotherTSV (through semiconductor via) of the first TSV area 222 to at leastone node of the third memory bank 216 that is disposed near the firstTSV area 222. Further, a fourth internal interconnect 238 is formed fromanother TSV (through semiconductor via) of the second TSV area 224 to atleast one node of the fourth memory bank 218 that is disposed near thesecond TSV area 224.

FIG. 6 further shows a first I/O (input/output) pad area 226 having aplurality of I/O (input/output) pads 227 formed onto the semiconductorsubstrate of the master chip 102. In addition in FIG. 6, a second I/O(input/output) pad area 228 has a plurality of I/O (input/output) pads229 formed onto the semiconductor substrate of the master chip 102. Inaddition, an I/O (input/output) circuit 230 is formed in a center area231 of the semiconductor substrate of the master chip 102.

The center area 231 is disposed between the first and second TSV areas222 and 224. The I/O circuit 230 switches the signals between the I/Opads 227 and 229 and the TSVs 225 and 227. The memory controller 130generates command, address, and data signals applied on the I/O pads 227and 229 of the master chip 102.

The cross-sectional view of FIG. 1 is for the three dimensional memorymodule 100 with the master chip 102 being configured to be faced up.Thus, the integrated circuit for the master chip 102 is fabricated onthe first face FA that faces away from the substrate 104 and toward thefirst slave chip 106. In that case, the TSVs 112 are formed onto thefirst face FA of the master chip 102 and not through the semiconductorsubstrate of the master chip 102. Such TSVs 112 are formed onto aninterconnect structure formed on the first face FA of the master chip102 for interconnecting the master chip 102 with the slave chips 106,108, and 110.

In contrast, FIG. 7 shows a cross-sectional view of a three dimensionalmemory module 101 with a master chip 245 being configured to be faceddown, according to an alternative embodiment of the present invention.In that case in FIG. 7, the integrated circuit for the master chip 245is fabricated on the first face FA that faces toward the substrate 104and away from the first slave chip 106. Referring to FIG. 7, a firstinterconnect layer 242 and a second interconnect layer 244 arefabricated on the first face FA of the master chip 245.

In FIG. 7, TSVs (through semiconductor vias, i.e., through electrodes)246 are formed through the respective semiconductor substrates of theslave chips 106, 108, and 110 and the master chip 102. Such TSVs 246 areformed onto interconnect structures formed on the first face FA of themaster chip 102 for interconnecting the master chip 102 with the slavechips 106, 108, and 110.

According to an aspect of the present invention, multiple memory banks,multiple ranks, and/or multiple bank groups are formed in the threedimensional memory module 100 of FIG. 1 or 101 of FIG. 7. The memorycells of the memory cores 134, 136, 138, and 140 in the master and slavechips 102, 106, 108, and 110 may be organized to have multiple memorybanks such that any two such memory banks are accessed sequentially witha delay time of t_(CCD) _(—) _(Long) between such sequential accesses.

In addition, the memory cells of the memory cores 134, 136, 138, and 140in the master and slave chips 102, 106, 108, and 110 may be organized tohave multiple bank groups such that any two such bank groups areaccessed sequentially with a delay time of t_(CCD) _(—) _(Short) betweensuch sequential accesses. Each bank group is comprised of a plurality ofmemory banks, and the delay time of t_(CCD) _(—) _(Short) for accessbetween bank groups is shorter than the delay time of t_(CCD) _(—)_(Long) for access between memory banks.

Furthermore, the memory cells of the memory cores 134, 136, 138, and 140in the master and slave chips 102, 106, 108, and 110 may be organized tohave multiple ranks. The multiple ranks share address and command pinsfor access but chip select (CS) pins are used to specify which rank isbeing accessed for minimizing the total number of pins. The concepts offorming multiple memory banks, multiple bank groups, or multiple ranks,individually and in general, are known to one of ordinary skill in theart of memory technology.

In FIGS. 2 and 3, the master memory core 134 of the master chip 102 aswell as the slave memory cores 136, 138, and 140 of the slave chips 106,108, and 110 form at least one memory bank, bank group, and/or rank ofthe three dimensional memory module 100. Thus, the master memory core134 of the master chip 102 and the slave memory cores 136, 138, and 140of the slave chips 106, 108, and 110 comprise a total capacity of thethree dimensional memory module 100 available for access by the memorycontroller 130 for data storage.

FIG. 8A illustrates an embodiment of the three dimensional memory systemhaving multiple memory banks (or multiple bank groups or multiple ranks)with each memory bank (or each bank group or each rank) being formedentirely within a respective one of the master and slave chips 102, 106,108, and 110. In addition in FIG. 8A, each of the master and slave chips102, 106, 108, and 110 has just one respective memory bank (orrespective bank group or respective rank) formed therein.

FIG. 8B illustrates an embodiment of the three dimensional memory systemhaving multiple memory banks (or multiple bank groups or multiple ranks)being formed entirely within a respective one of the master and slavechips 102, 106, 108, and 110. In addition in FIG. 8A, each of the masterand slave chips 102, 106, 108, and 110 has different respective multiplememory banks (or different respective multiple bank groups or differentrespective multiple ranks) formed therein.

FIG. 8C illustrates an embodiment of the three dimensional memory systemhaving multiple memory banks (or multiple bank groups or multiple ranks)with each memory bank (or each bank group or each rank) being formedwithin multiple chips of the master and slave chips 102, 106, 108, and110. In addition in FIG. 8C, each of the master and slave chips 102,106, 108, and 110 has a portion of just one respective memory bank (orrespective bank group or respective rank) formed therein.

FIG. 8D also illustrates an embodiment of the three dimensional memorysystem having multiple memory banks (or multiple bank groups or multipleranks) with each memory bank (or each bank group or each rank) beingformed within multiple chips of the master and slave chips 102, 106,108, and 110. Furthermore in FIG. 8D, each of the master and slave chips102, 106, 108, and 110 has portions of multiple respective memory banks(or multiple respective bank groups or multiple respective ranks) formedtherein.

FIG. 9 shows a block diagram of the three dimensional memory module 100of FIG. 1 (or 101 of FIG. 7) having multiple memory banks 252 with abidirectional external data bus 254, according to an example embodimentof the present invention. A respective sense amplifier array 256, arespective row address decoder 258, and a respective column addressdecoder 260 are formed for each of the memory banks 252.

An I/O (input/output) driver, an I/O (input/output) sense amplifier, andgate unit 262 is controlled by the respective column address decoder 260for accessing specified bit lines of a selected memory bank. A data pad264 is coupled to the bidirectional external data bus 254. A dataserializer 266 and an output buffer 268 are coupled between the gatingunit 262 and the data pad 264, and a data deserializer 270 and an inputbuffer 272 are coupled between the gating unit 262 and the data pad 264.

An address pad 274 and an address buffer 276 receive an address of thememory banks 252 to be accessed from the memory controller 130 forstorage in an address register 278. A bank controller 280 decodes a bankaddress portion of such an address stored in the address register 278for controlling a selected one of the row address decoders 258 and aselected one of the column address decoders 260 to access the memorycell(s) in the memory banks 252 corresponding to the address specifiedin the address register 278. The selected row address decoder 258decodes a row address portion of such an address, and the selectedcolumn address decoder 260 decodes a column address portion of such anaddress for such access to the memory cell(s) in the memory banks 252corresponding to the address specified in the address register 278.

A command pad 282 and a command buffer 284 receive a command for accessto such memory cell(s) in the memory banks 252 corresponding to theaddress specified in the address register 278. A control logic 286including a command decoder 288 and a MRS (mode register set) decodessuch a command to control the selected row address decoder to executethe command on the memory cell(s) in the memory banks 252 correspondingto the address specified in the address register 278.

FIG. 9 shows the three dimensional memory module 100 having multiplememory banks 252 but not multiple bank groups. The multiple memory banks252 share the gating unit 262 such that sequential access between twodifferent memory banks has a longer time margin of t_(CCD) _(—) _(Long)during memory bank to memory bank interleaving.

In contrast, FIG. 10 shows a block diagram of the three dimensionalmemory module 100 of FIG. 1 (or 101 of FIG. 7) having multiple bankgroups including a first bank group 292 and a second bank group 294 withthe bidirectional external data bus 254, according to another embodimentof the present invention. Elements having the same reference number inFIGS. 9 and 10 refer to elements having similar structure and/orfunction. Thus, FIG. 10 shows the respective row address decoders 258,the respective multiple memory banks 252 with the sense amp arrays 256,the respective gating unit 262, the respective column address decoders260, and the respective bank controller 280 for the first bank group292.

However, the second bank group 294 also includes separate respective rowaddress decoders, respective multiple memory banks with sense amparrays, a respective gating unit, respective column address decoders,and a respective bank controller (not shown in FIG. 10). In addition,the three dimensional memory module 100 of FIG. 10 also includes a bankgroup controller that decodes a bank group address portion of theaddress stored in the address register 278 for controlling the bankcontroller 280 corresponding to a selected one of the bank groups 292and 294 as indicated by such a bank group address portion.

In FIG. 10, each of the bank groups 292 and 294 has a respective gatingunit 262 such that the sequential access between two different bankgroups 292 and 294 has a shorter time margin of t_(CCD) _(—) _(Short)during bank group to bank group interleaving. In contrast, the memorybanks 252 within one bank group share the gating unit 262 such thatsequential access between two different memory banks 252 has a longertime margin of t_(CCD) _(—) _(Long) during memory bank to memory bankinterleaving.

FIG. 11 shows a block diagram of the three dimensional memory module 100of FIG. 1 (or 101 of FIG. 7) having the multiple bank groups 292 and 294with unidirectional external data buses 301 and 302, according toanother embodiment of the present invention. Elements having the samereference number in FIGS. 10 and 11 refer to elements having similarstructure and/or function.

However in FIG. 11, an input data pad 302 and an input buffer 304receive a command, an address, and input data from a unidirectionalwrite external data bus 301. Such a command, address, and input data maybe organized as a data frame that is decoded by a framing logic decoder306. The framing logic decoder 306 extracts the command CMD that isdecoded by the control logic 286, the address ADDR that is stored in theaddress register 278, and input data DIN that is sent to the respectivegating units 262 of the bank groups.

In FIG. 11, the memory controller 130 transmits a respective rankidentification unit within the data frame sent to the master chip 102for accessing each rank when the memory controller 130 and the masterchip 102 are coupled via unidirectional data buses. Alternatively, thememory controller 130 activates a respective chip select signal sent tothe master chip 102 for accessing each rank when the memory controller130 and the master chip 102 are coupled via a bidirectional data bus.

Furthermore in FIG. 11, an output buffer 310 and an output pad 312 arecoupled between a serializer 308 and a unidirectional read external databus 301. The gating unit 262 of the selected bank group being accessedoutputs parallel data bits that are serialized by the serializer 308 andoutput to the unidirectional read external data bus 301 by the outputbuffer 308 and the output pad 312 for a read access to the threedimensional memory module 100.

FIG. 12 shows a further block diagram of components in the examplememory bank 252 of an example slave chip 106 and the master chip 102 inthe three dimensional memory module 100 of FIG. 1 (or 101 of FIG. 7)with a bidirectional external data bus such as 254 in FIG. 9 or FIG. 10for example. FIG. 12 shows an example memory cell C with an access fieldeffect transistor MN having a gate connected to a word line WL andhaving a drain connected to a bit line BL. The column address decoder260 controls access to the bit line BL, and the row address decoder 258controls access to the word line WL. A bit line sense amplifier (BLSA)320 senses a bit data at the bit line BL or applies a voltagecorresponding to a received bit data on the bit line BL.

The gating unit 262 includes an I/O (input/output) write driver 322 fortransferring to the BLSA 320 the bit data to be written to the examplememory cell C. The gating unit 262 also includes an I/O (input/output)sense amplifier 324 for transferring from the BLSA 320 the bit data readfrom the example memory cell C.

FIG. 12 also illustrates that master internal data buses considered tobe within a master area 326 (shown outlined in dashed lines in FIG. 12)include the interconnect between the serializer 260 and the deserializer270 and gating units 328 and 330 fabricated on the master chip 102. Themaster internal data buses considered to be within a master area 326also include the TSVs (through semiconductor vias) 112 of FIG. 1 (or 246of FIG. 7) connecting the master chip 102 to the slave chips 106, 108,and 110.

FIG. 12 further illustrates that slave internal data buses considered tobe within a slave area 332 (shown outlined in dashed lines in FIG. 12)includes the interconnect between the gating unit 262 having the senseamplifier 324 and the write driver 322 and a respective gating unit 334coupled to the TSVs. FIG. 12 shows another gating unit 336 coupled tothe TSVs for another set of sense amplifier and write driver (not shownin FIG. 12).

In the example of the bidirectional external data bus 254 in FIG. 12,the internal data buses within both of the master area 326 and the slavearea 332 are formed to be bidirectional. A bidirectional data bustransmits bit data in either one of two directions at a given time: (1)from the memory bank 252 to the data pad 264 for a read operation; and(2) from the data pad 264 to the memory bank 252 for a write operation.Another words, a bidirectional data bus transmits write data and readdata at different times.

The gating units 262, 334, 336, 328, and 330 are controlled by a gatingcontroller 327 of FIG. 38 to set such a direction of bit datatransmission between the memory bank 252 and the bidirectional data pad264 from the command CMD and the address ADDR of the memory cell C beingaccessed. The gating controller 327 may be formed as part of the rowaddress decoder 258 in an example embodiment of the present invention.

FIG. 13 shows a block diagram of components in the example memory bank252 of an example slave chip 106 and the master chip 102 in the threedimensional memory module 100 of FIG. 1 (or 101 of FIG. 7) withunidirectional external data buses such as 301 and 302 in FIG. 11 forexample. Elements having the same reference number in FIGS. 12 and 13refer to elements having similar structure and/or function. However inFIG. 13, the internal data buses within the master area 326 areunidirectional. A unidirectional data bus is dedicated to transmit bitdata in only one direction at all times: (1) from the memory bank 252 tothe output data pad 312 for a read operation; or (2) from the input datapad 302 to the memory bank 252 for a write operation.

The master area 326 in FIG. 13 includes a gating unit 338 coupledbetween unidirectional read TSVs and the serializer 308 for coupling aselected memory bank to the serializer 308. The master area 326 in FIG.13 also includes a gating unit 340 coupled between unidirectional writeTSVs and a deserializer 342 for coupling a selected memory bank to thedeserializer 342. The deserializer 342 in FIG. 13 may be formed as partof the framing logic decoder 306 in FIG. 11.

In the example of the unidirectional external data buses 301 and 302 inFIGS. 11 and 13, the internal data buses within the master area 326 areunidirectional while the internal data buses within the slave area 332are bidirectional. The gating units 262, 334, 336, 338, and 340 arecontrolled by the gating controller 327 of FIG. 38 to set such a path ofbit data transmission between the memory bank 252 and the unidirectionaldata pads 312 and 302 from the command CMD and the address ADDR of thememory cell C being accessed. The gating controller 327 may be formed aspart of the row address decoder 258 in an example embodiment of thepresent invention.

Separate unidirectional data buses for read and write operations aredesirable for allowing simultaneous read and write operations. However,separate unidirectional data buses increase the total number ofinterconnect lines.

In an embodiment of the present invention, the internal data buseswithin the master area 326 are desired to include separateunidirectional data buses for read and write operations when multipleranks are formed in the three dimensional memory module 100 of FIG. 1(or 101 of FIG. 7), according to an embodiment of the present invention.The desirability of such unidirectional internal data buses in themaster area 326 for the multiple ranks is illustrated with the timingdiagrams of FIGS. 14, 15, and 16.

FIG. 14 shows a timing diagram of signals when the three dimensionalmemory module 100 executes a read command RD. Referring to FIGS. 2, 10,and 14 for example, the memory controller 130 generates a read commandRD with an address of the selected memory cells to be read from, insynchronization with an external clock signal 352. The external readcommand RD and address signals 354 are input to generate internal readcommand RD and address signals 356 within the three dimensional memorymodule 100.

After an address decoding time period tp1 from the read command RD beinginternally generated by the three dimensional memory module 100, readdata [3:0] 358 is generated at the selected memory bank (i.e., array) ofmemory cells in one of the master and slave chips 102, 106, 108, or 110.After a data propagation time period tp2, the read data [3:0] from theselected memory bank arrive as propagated data [3:0] 360 at theserializer 266 in the master area 326 of the master chip 102. After adata serialization time period tp3, the data [3:0] is serialized into aseries of bits D0, D1, D2, and D3 362 that is output at the data pad264.

FIG. 15 shows a timing diagram of signals when the three dimensionalmemory module 100 executes a write command WR. Referring to FIGS. 2, 10,and 14 for example, the memory controller 130 generates a write commandWR 364 along with a series of bits D0, D1, D2, and D3 366 to be writtento an address of the selected memory cells in synchronization with theexternal clock signal 352. The series of bits D0, D1, D2, and D3 aredeserialized into parallel write data [3:0] 368 by the deserializer 270after a data parallelization time period tp4.

The external write command WR and address signals 364 are also input asinternal write command WR and address signals 370 by the threedimensional memory module 100 after the data parallelization time periodtp4. Such parallel write data [3:0] 368 at the master area 326 arrivesat the selected memory bank (i.e., array) of memory cells in one of themaster and slave chips 102, 106, 108, or 110 as write data [3:0] 372after an address decoding and data propagation delay tp5 for beingwritten into the memory cells as specified by the address.

FIG. 16 shows a timing diagram of signals when the three dimensionalmemory module 100 executes a read command RD and a write command WRsequentially generated by the memory controller 130. The read and writecommands RD and WR are generated for two different ranks of the threedimensional memory module 100 with the master area 326 havingbidirectional internal data buses. FIG. 16 with both of the read andwrite commands RD and WR is illustrated from an overlap of FIGS. 14 and15 with the read command RD and the write command WR, respectively.

Referring to FIGS. 3, 10, and 16 for example, the memory controller 130sequentially generates the read command to be executed on a first rankof the three dimensional memory module 100 as indicated with anassociated chip select signal and generates the write command RD to beexecuted on a second rank of the three dimensional memory module 100 asindicated with an associated chip select signal, in synchronization withthe external clock signal 352. The external read and write commands RDand WR and address signals 374 from the memory controller 130 are inputas internal read and write commands RD and WR and address signals 376 bythe three dimensional memory module 100.

The external WR command is generated with sequential write data bits D0, D1 , D2 , and D3 to be written from the memory controller 130 asexternal data 378 at the data pad DQ 264. The internal WR command isgenerated as part of the internal command and address signals 376 afterthe data parallelization time period tp4 when the write data bits D0 ,D1 , D2 , and D3 have been deserialized by the deserializer 270 into aninternal data signal 380 at the master area 326 (at a beginning of timeperiod tp6 in FIG. 16). Referring to FIGS. 15 and 16, such parallelwrite data [3:0] 380 at the master area 326 arrives at the selected rank(i.e., array) of memory cells in one of the master and slave chips 102,106, 108, or 110 as write data [3:0] 382 after an address decoding anddata propagation delay tp5 for being written into the memory cells asspecified by the address.

Referring to FIGS. 15 and 16, after an address decoding time period tp1from the read command RD being internally generated by the threedimensional memory module 100, read data [3:0] 382 is generated at theselected rank (i.e., array) of memory cells in one of the master andslave chips 102, 106, 108, or 110. After a data propagation time periodtp2, the read data [3:0] from the selected rank arrive (at end of timeperiod tp2 in FIG. 16) as propagated read data [3:0] 380 at theserializer 266 in the master area 326 of the master chip 102. After adata serialization time period tp3, the data [3:0] is serialized into aseries of bits D0, D1, D2, and D3 362 that is output at the data pad DQ264.

In FIG. 16, note an overlap time period tp6 when the deserialized writedata [3:0] and the propagated read data [3:0] simultaneously arrive atthe same bidirectional internal data bus of the master area 326. Asillustrated in FIG. 16, use of a same bidirectional internal data bus ofthe master area 326 for execution of the read and write commands RD andWR when accessing multiple ranks of the three dimensional memory module100 disadvantageously results in collision of associated read and writedata.

Accordingly as illustrated in FIG. 13, unidirectional internal databuses are formed in the master area 326 when the memory cells of thethree dimensional memory module 100 are organized to have multipleranks. In that case, separate internal data buses are formed in themaster area 326 for read data and for write data as illustrated in FIG.13 to avoid collision of such data at the master area 326.

FIG. 17 shows a timing diagram of signals resulting in data collisionwhen a same data bus is used for read commands generated for multiplebank groups BG0 and BG1 in the three dimensional memory module 100 ofFIG. 1 (or 101 of FIG. 7). Referring to FIGS. 2 and 17 for example, thememory controller 130 generates a first read command RD with an addressof the selected memory cells to be read from in a first bank group BG0of the three dimensional memory module 100. The memory controller 130subsequently generates a second read command RD′ with an address of theselected memory cells to be read from in a second bank group BG1 of thethree dimensional memory module 100.

FIG. 17 illustrates such read commands RD and RD′ generated by thememory controller 130 as external read command and address signals 394that is synchronized with an external clock signal 392 also generated bythe memory controller 130. The external read command and address signals394 are input to generate corresponding internal read command andaddress signals 396 within the three dimensional memory module 100.

After a first address decoding time period tp11 from the first readcommand RD being internally generated by the three dimensional memorymodule 100, read data [3:0] 398 is generated at the first bank group BG0(i.e., array) of memory cells in one of the master and slave chips 102,106, 108, or 110. After a second address decoding time period tp12 fromthe second read command RD′ being internally generated by the threedimensional memory module 100, read data′ [3:0] 400 is generated at thesecond bank group BG1 (i.e., array) of memory cells in one of the masterand slave chips 102, 106, 108, or 110.

After a first data propagation time period tp13, the read data [3:0]from the first bank group BG0 arrive as propagated data [3:0] 402 at theserializer 266 in the master area 326 of the master chip 102. After asecond data propagation time period tp14, the read data′ [3:0] from thesecond bank group BG1 arrive as propagated data′ [3:0] 404 at theserializer 266 in the master area 326 of the master chip 102. After adata serialization time period tp9, the data [3:0] and/or data′ [3:0] isserialized into a series of bits D0, D1, D2, D3, and . . . 406 that isoutput at the data pad 264.

In FIG. 17, the read data [3:0] 402 arriving at the master area 326 fromthe first bank group BG0 overlaps with the read data′ [3:0] 404 arrivingat the master area 326 from the second bank group BG1 during a collisiontime period tp15. Thus, using a same shared data bus at the master area326 for execution of read commands RD and RD′ by both the first andsecond bank groups BG0 and BG1 disadvantageously results in collision ofread data at the same shared data bus. Accordingly in an exampleembodiment of the present invention, separate data buses are formed inthe master area 326 for each of the bank groups of the three dimensionalmemory module 100 of FIG. 1 (or 101 of FIG. 7).

FIG. 18 shows a timing diagram of signals resulting in data collisionwhen a same data bus is used for write commands generated for multiplebank groups BG0 and BG1 in the three dimensional memory module 100 ofFIG. 1 (or 101 of FIG. 7). Referring to FIGS. 2 and 18 for example, thememory controller 130 generates a first write command WR with an addressof the selected memory cells to be written to in a first bank group BG0of the three dimensional memory module 100. The memory controller 130subsequently generates a second write command WR′ with an address of theselected memory cells to be written to in a second bank group BG1 of thethree dimensional memory module 100.

FIG. 18 illustrates such write commands WR and WR′ generated by thememory controller 130 as external write command and address signals 408that is synchronized with an external clock signal 410 also generated bythe memory controller 130. The external write command and addresssignals 408 are input to generate corresponding internal write commandand address signals 412 within the three dimensional memory module 100.A first series of data bits D0, D1, D2, and D3 are generated as externaldata signal 414 by the memory controller 130 with the first writecommand WR, and a second series of data bits D0 , D1 , D2 , and D3 aregenerated as the external data signal 414 by the memory controller 130with the second write command WR′.

The series of bits D0, D1, D2, and D3 for the first write command WR aredeserialized into parallel write data [3:0] 416 by the deserializer 270in the master area 326 after a first data parallelization time periodtp16. Such parallel write data [3:0] 416 at the master area 326 arrivesat the first bank group BG0 in one of the master and slave chips 102,106, 108, or 110 as propagated write data [3:0] 418 after a firstaddress decoding and data propagation delay tp17 for being written intothe memory cells as specified by the address.

The series of bits D0 , D1 , D2 , and D3 for the second write commandWR′ are deserialized into parallel write data′ [3:0] 420 by thedeserializer 270 in the master area 326 after a second dataparallelization time period tp18. Such parallel write data′ [3:0] 416 atthe master area 326 arrives at the second bank group BG1 (i.e., array)in one of the master and slave chips 102, 106, 108, or 110 as propagatedwrite data′ [3:0] 422 after a second address decoding and datapropagation delay tp19 for being written into the memory cells asspecified by the address.

In FIG. 18, the write data [3:0] 416 deserialized at the master area 326for the first bank group BG0 overlaps with the write data′ [3:0] 420deserialized at the master area 326 for the second bank group BG1 duringa collision time period tp20. Thus, using a same shared data bus at themaster area 326 for execution of write commands WR and WR′ by both thefirst and second bank groups BG0 and BG1 disadvantageously results incollision of write data at the same shared data bus. Accordingly in anexample embodiment of the present invention, separate data buses areformed in the master area 326 for each of the bank groups of the threedimensional memory module 100 of FIG. 1 (or 101 of FIG. 7).

To avoid the collision of read data or write data as illustrated inFIGS. 17 and 18, separate data buses are formed in the master area 326.A first set of such data buses in the master area 326 are dedicated fortransmission of write/read data to/from the first bank group BG0. Inaddition, a second set of such data buses in the master area 326 arededicated for transmission of write/read data to/from the second bankgroup BG1, with the first set of such data buses being electricallyseparate from the second set of data buses.

FIGS. 19 and 20 illustrate maximizing wiring length in the master chip102 while minimizing wiring length in the slave chips 106, 108, and 110in the three dimensional memory module 100 of FIG. 1, according to anembodiment of the present invention. FIG. 19 shows a block diagram ofthe master chip 102, and FIG. 20 shows a perspective view of the threedimensional memory module 100 having the master 102 of FIG. 19.

For example referring to FIGS. 9 and 19, the master chip 102 includesfirst, second, third, fourth, fifth, sixth, seventh, and eighth memorybanks 432, 434, 436, 438, 442, 444, 446, and 448, respectively. Themaster chip 102 also includes respective sense amplifier and writedriver units 431, 433, 435, 437, 441, 443, 445, and 447 for the memorybanks 432, 434, 436, 438, 442, 444, 446, and 448, respectively.

FIGS. 19 and 20 illustrate forming a first signal path 452 on the masterchip 102 and forming at least one respective second signal path 454 and456 in each of the slave chips 454 and 456. The first signal path 452 isconnected to the second signal path 454 by through electrodes (i.e.TSVs, through semiconductor vias) 453, and the first signal path 452 isconnected to the second signal path 456 by through electrodes (i.e.TSVs, through semiconductor vias) 455.

The first signal path 452 is formed with at least one interconnectstructure formed on the master chip 102, and each of the second signalpaths 454 and 456 are formed with at least one interconnect structureformed on a respective one of the slave chips 106, 108, and 110. FIG. 20illustrates the second signal paths 454 and 456 formed on thesemiconductor substrate of the third slave chip 110. Respective signalpaths similar to the second signal paths 454 and 456 are also formed ineach of the slave chips 106 and 108 to be connected to the first signalpath 452 by the through electrodes 453 and 455.

For example referring to FIGS. 9, 19, and 20, the first signal path 452,the TSVs 453, and the second signal path 454 is for transmission of asignal between one of the control logic 286, the address register 278,the data serializer 266, or the data deserializer 270 fabricated on themaster chip 102 to a respective memory bank fabricated on a respectiveone of the slave chips 106, 108, and 110. Similarly, the first signalpath 452, the TSVs 455, and the second signal path 456 is fortransmission of a signal between one of the control logic 286, theaddress register 278, the data serializer 266, or the data deserializer270 fabricated on the master chip 102 to another respective memory bankfabricated on the respective one of the slave chips 106, 108, and 110.

In the embodiment of FIGS. 19 and 20, a respective length of the firstsignal path 452 on the master chip 102 is maximized while the respectivelengths of the second signal paths 454 and 456 on any of the slave chips106, 108, and 110 is minimized. For example, the respective total lengthof the at least one interconnect structure fabricated on thesemiconductor substrate of the master chip 102 for forming the firstsignal path 452 is maximized. On the other hand, the respective totallength of the at least one interconnect structure fabricated on thesemiconductor substrate of the slave chip 110 for forming the secondsignal path 454 or 456 is minimized.

In FIGS. 19 and 20, each of the slave chips 106, 108, and 110 receivesthe common signal transmitted through the first signal path 452 on themaster chip 102. However, each of the slave chips 106, 108, and 110transmits such a common signal through separate respective second signalpaths such as 454 or 456. Thus, adverse effects from variation of PVT(processing parameters, voltages, and temperatures) among the chips 102,106, 108, and 110 may be minimized by maximizing the length of the firstsignal path 452 on the master chip 102 while minimizing the lengths ofthe second signal path 454 or 456 on the slave chips 106, 108, and 110.Another words, a ratio of the length of the first signal path 452 on themaster chip 102 to the length of the second signal path 454 or 456 on aslave chip is maximized according to an aspect of the present invention.

For example, the respective total length of the at least oneinterconnect structure fabricated on the semiconductor substrate of themaster chip 102 for forming the first signal path 452 is at least twotimes the respective total length of the at least one interconnectstructure fabricated on the semiconductor substrate of the slave chip110 for forming the second signal path 454 or 456. FIG. 20 illustratesforming two sets of TSVs 453 and 455 for minimizing the lengths of thesecond signal paths 454 and 456 on the slave chips 102, 106, 108, and110.

FIGS. 21 and 22 illustrate forming one set of TSVs 466 disposed toward acenter of the slave chips 102, 106, 108, and 110, with a first signalpath 462 formed on the master chip 102 and a second signal path 464formed on the example slave chip 110. A respective second signal path464 is similarly formed on each of the slave chips 106 and 108. The TSVs466 connect the first signal path 462 formed on the master chip 102 withthe respective second signal paths 464 formed on the slave chips 106,108, and 110.

In the case of FIGS. 21 and 22, a total length of the first signal path462 formed on the master chip 102 is decreased from the example of FIG.20, and a total length of the second signal path 464 formed on the slavechip 110 is increased from the example of FIG. 20. Thus, the threedimensional memory module 100 of FIG. 22 is more susceptible to adverseeffects from variation of PVT (processing parameters, voltages, andtemperatures) among the chips 102, 106, 108, and 110. However, a fewernumber of TSVs 466 may be used in the three dimensional memory module100 of FIG. 22 than the number of TSVs 453 and 455 in the threedimensional memory module 100 of FIG. 20.

FIG. 23 shows a table of internal data bus types formed in the masterarea and the slave area depending on the type of external data bus,whether one rank or multiple ranks are formed, and whether one bankgroup or multiple bank groups are formed in the three dimensional memorymodule 100 of FIG. 1 (or 101 of FIG. 7). In FIG. 23, top rows 471, 472,473, and 474 are for the case of the three dimensional memory module 100having a bidirectional external data bus alternately transmitting bothread and write data as illustrated in FIG. 12. Also in FIG. 23, bottomrows 475, 476, 477, and 478 are for the case of the three dimensionalmemory module 100 having unidirectional external data buses, each beingdedicated to transmit one of read data or write data as illustrated inFIG. 13.

Column 479 in the table of FIG. 23 lists the type of master internaldata bus in the master area 326 in FIGS. 12 and 13 including the TSVsand the internal data buses formed on the master chip 102 and connectedto such TSVs. Column 480 in the table of FIG. 23 lists the type of slaveinternal data bus in the slave area 332 in FIGS. 12 and 13 including theinternal data buses formed on the master chip 102 and the slave chips106, 108, and 110 for connections from such TSVs to the memory cores134, 136, 138, and 140.

Row 471 in FIG. 23 is for the case of the three dimensional memorymodule 100 having one memory rank and one bank group as illustrated inFIGS. 24 and 25. Referring to FIG. 25, the first interface area betweenthe memory controller 130 and the external I/O 132 is formed in themaster chip 102. In addition, memory banks A and B are formed in themaster chip 102, memory banks C and D are formed in the first slave chip106, memory banks E and F are formed in the second slave chip 108, andmemory banks G and H are formed in the third slave chip 110.

FIG. 24 shows the master chip 102 having memory bank A portions 502 withcorresponding read sense amplifier and write driver units 503 and memorybank B portions 504 with corresponding read sense amplifier and writedriver units 505. FIG. 24 also shows the example slave chip 106 havingmemory bank C portions 506 with corresponding read sense amplifier andwrite driver units 507 and memory bank D portions 508 with correspondingread sense amplifier and write driver units 509.

Further referring to FIG. 24, the master chip includes the serializer266 and the deserializer 270 and the first gating units 328 and 330 allconnected to a first node 510. The gating unit 328 controls thedirection of signal transmission between first TSVs 512 and the firstnode 510, and the gating unit 330 controls the direction of signaltransmission between second TSVs 514 and the first node 510.

Also referring to FIG. 24, second gating units 516 and 518 are connectedbetween the TSVs 512 and 514 and bank interconnects 520 and 522,respectively. The bank interconnects 520 and 522 are connected to thememory banks A and B, respectively, fabricated in the master chip 102.The gating unit 516 controls the direction of signal transmissionbetween the first TSVs 512 and the bank interconnect 520 for the memorybank A, and the gating unit 518 controls the direction of signaltransmission between the second TSVs 514 and the bank interconnect 522for the memory bank B.

Additionally referring to FIG. 24, third gating units 524 and 526 areconnected between the TSVs 512 and 514 and bank interconnects 528 and530, respectively. The bank interconnects 528 and 530 are connected tothe memory banks C and D, respectively, fabricated in the slave chip106. The gating unit 524 controls the direction of signal transmissionbetween the first TSVs 512 and the bank interconnect 528 for the memorybank C, and the gating unit 526 controls the direction of signaltransmission between the second TSVs 514 and the bank interconnect 530for the memory bank D. The gating units 328, 330, 516, 518, 524, and 526are controlled by the gating controller 327 of FIG. 38 according to theaddress ADDR and the command CMD for determining the direction of signaltransmission.

Referring to FIGS. 12, 23, 24, and 25, when the three dimensional memorymodule 100 has a bidirectional external data bus with one memory rankand one bank group (row 471 in FIG. 23), the internal data buses in themaster area 326 including the nodes 510 and the TSVs 512 and 514 arealso bidirectional. Also in that case, the internal data buses in theslave area 332 including the bank interconnects 520, 522, 528, and 530are also bidirectional.

Row 472 in FIG. 23 is for the case of the three dimensional memorymodule 100 having a bidirectional external data bus along with onememory rank and multiple bank groups as illustrated in FIGS. 26 and 28,according to another embodiment of the present invention. Referring toFIG. 26, the first interface area between the memory controller 130 andthe external I/O 132 is formed in the master chip 102. In addition inFIG. 26, memory bank A is formed entirely in the memory core 134 of themaster chip 102, memory bank B is formed entirely in the memory core 136of the slave chip 106, memory bank C is formed entirely in the memorycore 138 of the slave chip 108, and memory bank D is formed entirely inthe memory core 140 of the slave chip 110.

FIGS. 26 and 28 show a first bank group BG0 formed to extend verticallyby including portions of the memory cores 134, 136, 138, and 140 in thestack of chips 102, 106, 108, and 110. In addition, FIGS. 26 and 28 showa second bank group BG1 formed to extend vertically by including theremaining portions of the memory cores 134, 136, 138, and 140 in thestack of chips 102, 106, 108, and 110.

Thus in FIG. 28, the master chip 102 includes first memory bank Aportions 532 with corresponding read sense amplifier and write driverunits 533 forming part of the first bank group BG0 (shown outlined indashed lines in FIG. 28). The master chip 102 also includes secondmemory bank A portions 534 with corresponding read sense amplifier andwrite driver units 535 forming part of the second bank group BG1 (shownoutlined in dashed lines in FIG. 28).

Also in FIG. 28, the slave chip 106 includes first memory bank Bportions 536 with corresponding read sense amplifier and write driverunits 537 forming part of the first bank group BG0 (shown outlined indashed lines in FIG. 28). The slave chip 106 also includes second memorybank B portions 538 with corresponding read sense amplifier and writedriver units 539 forming part of the second bank group BG1 (shownoutlined in dashed lines in FIG. 28).

Further referring to FIG. 28, the master chip 102 includes theserializer 266, the deserializer 270, and the first gating units 328 and330 all connected to the first node 510. The gating unit 328 controlsthe direction of signal transmission between first TSVs 542 and thefirst node 510, and the gating unit 330 controls the direction of signaltransmission between second TSVs 544 and the first node 510.

Also referring to FIG. 28, second gating units 546 and 548 are connectedbetween the TSVs 542 and 544 and bank A interconnects 550 and 552,respectively. The bank interconnect 550 is connected to the first memorybank A portions 532, and the bank interconnect 552 is connected to thesecond memory bank A portions 534, within the master chip 102. Thegating unit 546 controls the direction of signal transmission betweenthe first TSVs 542 and the bank interconnect 550, and the gating unit548 controls the direction of signal transmission between the secondTSVs 544 and the bank interconnect 552.

Additionally referring to FIG. 28, third gating units 554 and 556 areconnected between the TSVs 542 and 544 and bank B interconnects 558 and560, respectively. The bank interconnect 558 is connected to the firstmemory bank B portions 536, and the bank interconnect 560 is connectedto the second memory bank B portions 538, within the slave chip 106. Thegating unit 554 controls the direction of signal transmission betweenthe first TSVs 542 and the bank interconnect 558, and the gating unit556 controls the direction of signal transmission between the secondTSVs 544 and the bank interconnect 560. The gating units 328, 330, 546,548, 554, and 556 are controlled by the gating controller 327 of FIG. 38according to the address ADDR and the command CMD for determining thedirection of signal transmission.

Referring to FIGS. 12, 23, 26, and 28, when the three dimensional memorymodule 100 has a bidirectional external data bus with one memory rankand multiple bank groups B0 and B1 (row 472 in FIG. 23), the internaldata buses in the master area 326 including the nodes 510 and the TSVs542 and 544 are also bidirectional. Also in that case, the internal databuses in the slave area 332 including the bank interconnects 550, 552,558, and 560 are also bidirectional.

Furthermore in that case (row 472 in FIG. 23), respective separate databuses are formed for each of the bank groups BG0 and BG1 to prevent datacollision as explained above with reference to FIGS. 17 and 18. Thus inFIG. 28, a first set of data buses 542, 550, and 558 are formed for thefirst bank group BG0, and a second set of data buses 544, 552, and 560are formed for the second bank group BG1, with the second set of databuses being electrically separated from the first set of data buses bythe gating units 328 and 330.

Row 473 in FIG. 23 is for the case of the three dimensional memorymodule 100 having a bidirectional external data bus along with multiplememory ranks and one bank group as illustrated in FIGS. 27 and 29,according to another embodiment of the present invention. Referring toFIG. 27, the first interface area between the memory controller 130 andthe external I/O 132 is formed in the master chip 102. In addition inFIG. 27, respective memory bank A, B, C, and D portions forming a firstrank (Rank #1) are formed entirely in the memory core 134 of the masterchip 102.

Also in FIG. 27, respective memory bank A, B, C, and D portions forminga second rank (Rank #2) are formed entirely in the memory core 136 ofthe slave chip 106. Further in FIG. 27, respective memory bank A, B, C,and D portions forming a third rank (Rank #3) are formed entirely in thememory core 138 of the slave chip 108. Additionally in FIG. 27,respective memory bank A, B, C, and D portions forming a fourth rank(Rank #4) are formed entirely in the memory core 140 of the slave chip110.

FIGS. 27 and 29 show a respective one of the first, second, third, andfourth ranks formed with each of the memory cores 134, 136, 138, and 140of the master and slave chips 102, 106, 108, and 110. Thus in FIG. 29,the master chip 102 includes first memory bank A portions 562 withcorresponding read sense amplifier and write driver units 563, firstmemory bank B portions 564 with corresponding read sense amplifier andwrite driver units 565, first memory bank C portions 566 withcorresponding read sense amplifier and write driver units 567, and firstmemory bank D portions 568 with corresponding read sense amplifier andwrite driver units 569, for forming the first memory rank (Rank #1).

Further in FIG. 29, the slave chip 106 includes second memory bank Aportions 572 with corresponding read sense amplifier and write driverunits 573, second memory bank B portions 574 with corresponding readsense amplifier and write driver units 575, second memory bank Cportions 576 with corresponding read sense amplifier and write driverunits 577, and second memory bank D portions 578 with corresponding readsense amplifier and write driver units 579, for forming the secondmemory rank (Rank #2).

Also referring to FIG. 29, the master chip 102 includes the serializer266, the deserializer 270, first gating units 580 and 582 coupled to thedeserializer 270 at a first node 583, and second gating units 584 and586 coupled to the serializer 266 at a second node 587. The first gatingunits 580 and 582 determine which one of first and second write TSVs 592and 594 has write data from the deserializer 270 applied thereon. Thesecond gating units 584 and 586 determine which one of first and secondread TSVs 596 and 598 is connected to the serializer 266 that serializesrespective read data on such a selected one of the read TSVs 596 and598.

Further referring to FIG. 29, a third gating unit 602 controls couplingof one of the read TSVs 596 and the write TSVs 592 to a first bankinterconnect 604 connected to the left bank portions 562 and 564. Afourth gating unit 606 controls coupling of one of the read TSVs 596 andthe write TSVs 592 to a second bank interconnect 608 connected to theright bank portions 562 and 564. A fifth gating unit 610 controlscoupling of one of the read TSVs 598 and the write TSVs 594 to a thirdbank interconnect 612 connected to the left bank portions 566 and 568. Asixth gating unit 614 controls coupling of one of the read TSVs 598 andthe write TSVs 594 to a fourth bank interconnect 616 connected to theright bank portions 566 and 568.

Also referring to FIG. 29, a seventh gating unit 618 controls couplingof one of the read TSVs 596 and the write TSVs 592 to a fifth bankinterconnect 620 connected to the left bank portions 572 and 574. Aneighth gating unit 622 controls coupling of one of the read TSVs 596 andthe write TSVs 592 to a sixth bank interconnect 624 connected to theright bank portions 572 and 574. A ninth gating unit 626 controlscoupling of one of the read TSVs 598 and the write TSVs 594 to a seventhbank interconnect 628 connected to the left bank portions 576 and 578. Atenth gating unit 630 controls coupling of one of the read TSVs 598 andthe write TSVs 594 to an eighth bank interconnect 632 connected to theright bank portions 576 and 578.

The gating units 580, 582, 584, 586, 602, 606, 610, and 614 are formedin the master chip 102. The gating units 618, 622, 626, and 630 areformed in the slave chip 106. The gating units 580, 582, 584, 586, 602,606, 610, 614, 618, 622, 626, and 630 are controlled by the gatingcontroller 327 of FIG. 38 according to the address ADDR and the commandCMD for determining the direction of signal transmission.

Referring to FIGS. 12, 23, 27, and 29, when the three dimensional memorymodule 100 has a bidirectional external data bus with multiple memoryranks and one bank group (row 473 in FIG. 23), the internal data busesin the master area 326 including the nodes 583 and 587 and the TSVs 592,594, 596, and 598 are each unidirectional being dedicated to transmit arespective one of read data or write data. Accordingly in that case (row473 in FIG. 23), respective separate unidirectional data buses areformed for the read data and the write data for preventing datacollision during rank to rank interleaving as explained above withreference to FIGS. 14, 15, and 16.

Also in that case, the internal data buses in the slave area 332including the bank interconnects 604, 608, 612, 616, 620, 624, 628, and632 are each bidirectional transmitting both read data and write data atdifferent times. The bidirectional bank interconnects 604, 608, 612,616, 620, 624, 628, and 632 are capable of transmitting both read dataand write data but transmit one of read data or write data at any giventime depending on which respective one of read TSVs or write TSVs isconnected thereto.

Row 474 in FIG. 23 is for the case of the three dimensional memorymodule 100 having a bidirectional external data bus along with multiplememory ranks and multiple bank groups as illustrated in FIGS. 30 and 33,according to another embodiment of the present invention. Referring toFIG. 30, the first interface area between the memory controller 130 andthe external I/O 132 is formed in the master chip 102. In addition inFIG. 30, memory bank A is formed entirely in the memory core 134 of themaster chip 102, memory bank B is formed entirely in the memory core 136of the slave chip 106, memory bank C is formed entirely in the memorycore 138 of the slave chip 108, and memory bank D is formed entirely inthe memory core 140 of the slave chip 110.

FIGS. 30 and 33 show a first bank group BG0 formed to extend verticallyby including portions of the memory cores 134, 136, 138, and 140 in thestack of chips 102, 106, 108, and 110. In addition, FIGS. 30 and 33 showa second bank group BG1 formed to extend vertically by including theremaining portions of the memory cores 134, 136, 138, and 140 in thestack of chips 102, 106, 108, and 110.

Further in FIGS. 30 and 33, a first rank (Rank #1) 634 comprised ofportions of the first and second bank groups BG0 and BG1 is formed toextend vertically by including portions of the memory cores 134, 136,138, and 140 in the stack of chips 102, 106, 108, and 110. Also in FIGS.30 and 33, a second rank (Rank #2) 636 comprised of remaining portionsof the first and second bank groups BG0 and BG1 is formed to extendvertically by including remaining portions of the memory cores 134, 136,138, and 140 in the stack of chips 102, 106, 108, and 110.

Thus in FIG. 33, the master chip 102 includes first memory bank Aportions 642 with corresponding read sense amplifier and write driverunits 643 forming part of the first bank group BG0 in the first rank 634(shown outlined in dashed lines in FIG. 28). The master chip 102 alsoincludes second memory bank A portions 644 with corresponding read senseamplifier and write driver units 645 forming part of the second bankgroup BG1 in the first rank 634 (shown outlined in dashed lines in FIG.28).

Additionally in FIG. 33, the master chip 102 includes third memory bankA portions 646 with corresponding read sense amplifier and write driverunits 647 forming part of the first bank group BG0 in the second rank636 (shown outlined in dashed lines in FIG. 28). The master chip 102also includes fourth memory bank A portions 648 with corresponding readsense amplifier and write driver units 649 forming part of the secondbank group BG1 in the second rank 636 (shown outlined in dashed lines inFIG. 28).

Further in FIG. 33, the slave chip 106 includes first memory bank Bportions 652 with corresponding read sense amplifier and write driverunits 653 forming part of the first bank group BG0 in the first rank 634(shown outlined in dashed lines in FIG. 28). The slave chip 106 alsoincludes second memory bank B portions 654 with corresponding read senseamplifier and write driver units 655 forming part of the second bankgroup BG1 in the first rank 634 (shown outlined in dashed lines in FIG.28).

Additionally in FIG. 33, the slave chip 106 includes third memory bank Bportions 656 with corresponding read sense amplifier and write driverunits 657 forming part of the first bank group BG0 in the second rank636 (shown outlined in dashed lines in FIG. 28). The slave chip 102 alsoincludes fourth memory bank B portions 658 with corresponding read senseamplifier and write driver units 659 forming part of the second bankgroup BG1 in the second rank 636 (shown outlined in dashed lines in FIG.28).

Also referring to FIG. 33, the master chip 102 includes the serializer266, the deserializer 270, first gating units 660 and 662 coupled to theserializer 266 at a first node A, and second gating units 664 and 666coupled to the serializer 266 at the first node A. The master chip 102further includes third gating units 668 and 670 coupled to thedeserializer 270 at a second node B, and fourth gating units 672 and 674coupled to the deserializer 270 at the second node B.

The first gating units 660 and 662 determine which one of first andsecond TSVs 682 and 684 is connected to the serializer 266 thatserializes respective read data on such a selected one of the TSVs 682and 684 when transmitting read data. The second gating units 664 and 666determine which one of third and fourth TSVs 686 and 688 is connected tothe serializer 266 that serializes respective read data on such aselected one of the TSVs 686 and 688 when transmitting read data.

The third gating units 668 and 670 determine which one of the first andsecond TSVs 682 and 684 has write data from the deserializer 270 appliedthereon when transmitting write data. The fourth gating units 672 and674 determine which one of the third and fourth TSVs 686 and 688 haswrite data from the deserializer 270 applied thereon when transmittingwrite data.

Also referring to FIG. 33, a fifth gating unit 681 is connected betweenthe TSVs 686 and a first bank interconnect 683 connected to the memorybank A portions 642 in the first bank group BG0 of the first rank (Rank#1) within the master chip 102. A sixth gating unit 685 is connectedbetween the TSVs 682 and a second bank interconnect 687 connected to thememory bank A portions 644 in the second bank group BG1 of the firstrank (Rank #1) within the master chip 102.

Further referring to FIG. 33, a seventh gating unit 690 is connectedbetween the TSVs 684 and a third bank interconnect 692 connected to thememory bank A portions 646 in the first bank group BG0 of the secondrank (Rank #2) within the master chip 102. An eighth gating unit 694 isconnected between the TSVs 688 and a fourth bank interconnect 696connected to the memory bank A portions 648 in the second bank group BG1of the second rank (Rank #2) within the master chip 102.

Also referring to FIG. 33, a ninth gating unit 698 is connected betweenthe TSVs 686 and a fifth bank interconnect 700 connected to the memorybank B portions 652 in the first bank group BG0 of the first rank (Rank#1) within the slave chip 106. A tenth gating unit 702 is connectedbetween the TSVs 682 and a sixth bank interconnect 704 connected to thememory bank B portions 654 in the second bank group BG1 of the firstrank (Rank #1) within the slave chip 106.

Further referring to FIG. 33, an eleventh gating unit 706 is connectedbetween the TSVs 684 and a seventh bank interconnect 708 connected tothe memory bank B portions 656 in the first bank group BG0 of the secondrank (Rank #2) within the slave chip 106. A twelfth gating unit 710 isconnected between the TSVs 688 and an eighth bank interconnect 712connected to the memory bank B portions 658 in the second bank group BG1of the second rank (Rank #2) within the slave chip 106.

The gating unit 681 controls the direction of signal transmissionbetween the TSVs 686 and the first bank interconnect 683, and the gatingunit 685 controls the direction of signal transmission between the TSVs682 and the second bank interconnect 687, within the master chip 102.The gating unit 690 controls the direction of signal transmissionbetween the TSVs 684 and the third bank interconnect 692, and the gatingunit 694 controls the direction of signal transmission between the TSVs688 and the fourth bank interconnect 696, within the master chip 102.

The gating unit 698 controls the direction of signal transmissionbetween the TSVs 686 and the fifth bank interconnect 700, and the gatingunit 702 controls the direction of signal transmission between the TSVs682 and the sixth bank interconnect 704, within the slave chip 106. Thegating unit 706 controls the direction of signal transmission betweenthe TSVs 684 and the seventh bank interconnect 708, and the gating unit710 controls the direction of signal transmission between the TSVs 688and the eighth bank interconnect 712, within the slave chip 106.

The gating units 660, 662, 664, 666, 668, 670, 672, 674, 681, 685, 690,and 694 are formed in the master chip 102, and the gating units 698,702, 706, and 710 are formed in the slave chip 106. The gating units660, 662, 664, 666, 668, 670, 672, 674, 681, 685, 690, 694, 698, 702,706, and 710 are controlled by the gating controller 327 of FIG. 38according to the address ADDR and the command CMD for determining thedirection of signal transmission.

With the three dimensional memory module 100 of FIG. 33 having multipleranks (row 474 in FIG. 23), unidirectional read and write data buses areformed with the nodes A and B in the master area 326. In addition inthat case, the TSVs 682, 684, 686, and 688 are used as unidirectionalread and write data buses during rank to rank interleaving among themultiple ranks of the three dimensional memory module 100 of FIG. 33.Such use of the TSVs 682, 684, 686, and 688 prevents data collisionduring rank to rank interleaving as explained above with respect toFIGS. 14, 15, and 16.

Alternatively with the three dimensional memory module 100 of FIG. 33also having multiple bank groups (row 474 in FIG. 23), the TSVs 682,684, 686, and 688 form bidirectional read and write data buses duringbank group to bank group interleaving among the multiple bank groups BG0and BG1 of the three dimensional memory module 100 of FIG. 33. Thus,separate sets of bidirectional read and write data buses are formed bythe TSVs 682, 684, 686, and 688 for the multiple bank groups BG0 and BG1to prevent data collision during bank group to bank group interleavingas explained above with respect to FIGS. 17 and 18. Also in that case(row 474 in FIG. 23) of FIG. 33, the internal data buses in the slavearea 332 including the bank interconnects 683, 687, 692, 696, 700, 704,708, and 712 for connection to the memory bank portions arebidirectional.

Row 475 in FIG. 23 is for the case of the three dimensional memorymodule 100 having one memory rank and one bank group with unidirectionalexternal data buses as illustrated in FIGS. 25 and 34. Elements havingthe same reference number in FIGS. 24 and 34 refer to elements havingsimilar structure and/or function. FIGS. 24 and 34 are both for thethree dimensional memory module 100 having one memory rank and one bankgroup. However, FIG. 24 is for the three dimensional memory module 100having a bidirectional external data bus (row 471 in FIG. 23), and FIG.34 is for the three dimensional memory module 100 having unidirectionalexternal data buses (row 475 in FIG. 23).

Referring to FIG. 34, the master chip 102 includes the serializer 308,the deserializer 342, first gating units 329 and 331 coupled to theserializer 308 at a first node 511, and second gating units 333 and 335coupled to the deserializer 342 at a second node 513. The first gatingunits 329 and 331 determine which one of TSVs 512 and 514 is connectedto the serializer 308 that serializes respective read data on such aselected one of the TSVs 512 and 514. The second gating units 333 and335 determine which of the TSVs 512 and 514 has write data from thedeserializer 342 applied thereon.

Referring to FIGS. 13, 23, 25, and 34, when the three dimensional memorymodule 100 has unidirectional external data buses with one memory rankand one bank group (row 475 in FIG. 23), the internal data buses in themaster area 326 including the nodes 511 and 513 are unidirectional databuses with each unidirectional bus being dedicated to transmit arespective one of read data or write data. Also in that case, theinternal data buses in the slave area 332 including the bankinterconnects 520, 522, 528, and 530 and the TSVs 512 and 514 arebidirectional, each transmitting read data and write data at differenttimes.

Row 476 in FIG. 23 is for the case of the three dimensional memorymodule 100 having one memory rank and multiple bank groups withunidirectional external data buses as illustrated in FIGS. 26 and 35.Elements having the same reference number in FIGS. 28 and 35 refer toelements having similar structure and/or function. FIGS. 28 and 35 areboth for the three dimensional memory module 100 having one memory rankand multiple bank groups, as illustrated in FIG. 26. However, FIG. 28 isfor the three dimensional memory module 100 having a bidirectionalexternal data bus (row 472 in FIG. 23), and FIG. 35 is for the threedimensional memory module 100 having unidirectional external data buses(row 476 in FIG. 23).

Referring to FIG. 35, the master chip 102 includes the serializer 308,the deserializer 342, first gating units 722 and 724 coupled to theserializer 308 at a first node 730, and second gating units 726 and 728coupled to the deserializer 342 at a second node 732. The first gatingunits 722 and 724 determine which one of TSVs 542 and 544 is connectedto the serializer 308 that serializes respective read data on such aselected one of the TSVs 542 and 544. The second gating units 726 and728 determine which of the TSVs 542 and 544 has write data from thedeserializer 342 applied thereon.

Referring to FIGS. 13, 23, 26, and 35, when the three dimensional memorymodule 100 has unidirectional external data buses with one memory rankand multiple bank groups (row 476 in FIG. 23), the internal data busesin the master area 326 including the nodes 730 and 732 areunidirectional buses with each unidirectional bus being dedicated totransmit a respective one of read data or write data. Also in that case,the internal data buses in the slave area 332 including the bankinterconnects 550, 552, 558, and 560 and the TSVs 542 and 544 arebidirectional, each transmitting read data and write data at differenttimes. Further in that case, separate TSVs 542 and 544 are formed asseparate data buses for each of the bank groups BG0 and BG1 to preventdata collision during bank group to bank group interleaving as explainedabove with respect to FIGS. 17 and 18.

Row 477 in FIG. 23 is for the case of the three dimensional memorymodule 100 having multiple memory ranks and one bank group withunidirectional external data buses as illustrated in FIGS. 27 and 29.Another words, FIGS. 27 and 29 illustrate internal data buses within themaster chip 102 and the example slave chip 106 for both cases of thethree dimensional memory module 100 having a bidirectional external databus or unidirectional external data buses (rows 473 and 477 in FIG. 23).

For the case of the three dimensional memory module 100 having thebidirectional external data bus 264 of FIGS. 12 and 36, the deserializer270 and serializer 266 are both coupled to the bidirectional externaldata bus 264 in FIG. 29. For the case of the three dimensional memorymodule 100 having the unidirectional external data buses 302 and 312 ofFIGS. 13 and 37, the deserializer 342 and the serializer 308 arerespectively coupled to the unidirectional external data buses 302 and312 in FIG. 29.

For the case of the three dimensional memory module 100 having multiplememory ranks and one bank group with the unidirectional external databuses (row 477 of FIG. 23), the internal data buses in the master area326 including the nodes 583 and 587 and the TSVs 592, 594, 596, and 598are each unidirectional being dedicated to transmit a respective one ofread data or write data. Accordingly in that case (row 477 in FIG. 23),respective separate unidirectional data buses are formed for the readdata and the write data for preventing data collision during rank torank interleaving as explained above with reference to FIGS. 14, 15, and16.

Also in that case (row 477 in FIG. 23), the internal data buses in theslave area 332 including the bank interconnects 604, 608, 612, 616, 620,624, 628, and 632 are each bidirectional transmitting both read data andwrite data. The bidirectional bank interconnects 604, 608, 612, 616,620, 624, 628, and 632 transmit both read data and write data atdifferent times depending on which respective one of read TSVs or writeTSVs is connected to each of such bidirectional bank interconnects.

Row 478 in FIG. 23 is for the case of the three dimensional memorymodule 100 having multiple memory ranks and multiple bank groups withunidirectional external data buses as illustrated in FIGS. 30 and 33.Another words, FIGS. 30 and 33 illustrate internal data buses within themaster chip 102 and the example slave chip 106 for both cases of thethree dimensional memory module 100 having a bidirectional external databus or unidirectional external data buses.

For the case of the three dimensional memory module 100 having thebidirectional external data bus 264 of FIGS. 12 and 36, the deserializer270 and serializer 266 are both coupled to the bidirectional externaldata bus 264 in FIG. 33. For the case of the three dimensional memorymodule 100 having the unidirectional external data buses 302 and 312 ofFIGS. 13 and 37, the deserializer 342 and the serializer 308 arerespectively coupled to the unidirectional external data buses 302 and312 in FIG. 33.

With the three dimensional memory module 100 of FIG. 33 having multipleranks (row 478 in FIG. 23), unidirectional read and write data buses areformed with the nodes A and B in the master area 326. In addition inthat case, the TSVs 682, 684, 686, and 688 are used as unidirectionalread and write data buses during rank to rank interleaving among themultiple ranks of the three dimensional memory module 100 of FIG. 33.Such use of the TSVs 682, 684, 686, and 688 prevents data collisionduring rank to rank interleaving as explained above with respect toFIGS. 14, 15, and 16.

Alternatively with the three dimensional memory module 100 of FIG. 33also having multiple bank groups (row 478 in FIG. 23), the TSVs 682,684, 686, and 688 are used as bidirectional read and write data busesduring bank group to bank group interleaving among the multiple bankgroups BG0 and BG1 of the three dimensional memory module 100 of FIG.33. Thus, separate sets of bidirectional read and write data buses areformed by the TSVs 682, 684, 686, and 688 for the multiple bank groupsBG0 and BG1 to prevent data collision during bank group to bank groupinterleaving as explained above with respect to FIGS. 17 and 18. Also inthat case (row 478 in FIG. 23) of FIG. 33, the internal data buses inthe slave area 332 including the bank interconnects 683, 687, 692, 696,700, 704, 708, and 712 for connection to the memory bank portions arebidirectional.

In summary referring to all rows 471, 472, 473, 474, 475, 476, 477, and478 in FIG. 23, the internal data buses in the slave area 332 arebidirectional for minimizing the number of interconnect structures forconnection to the memory cores of the master and slave chips 102, 106,108, and 110. In addition, the internal data buses in the master area326 include unidirectional read and write data buses when the threedimensional memory module 100 has unidirectional external data buses,and when the three dimensional memory module 100 has multiple ranks forpreventing data collision during rank to rank interleaving as explainedabove with respect to FIGS. 14, 15, and 16. Otherwise, the internal databuses in the master area 326 are bidirectional data buses for minimizingthe number of interconnect structures therein.

Also in FIG. 23, the master area 326 has a separate set of data busesfor each bank group when the three dimensional memory module 100 hasmultiple bank groups for preventing data collision during bank group tobank group interleaving as explained above with respect to FIGS. 17 and18. Example configurations of the internal data buses in the master area326 and the slave area 332 as illustrated in FIGS. 24, 28, 29, 33, 34,and 35 are by way of example only. In addition, FIGS. 24, 28, 29, 33,34, and 35 illustrate example capacity organizations of the memory cores134, 136, 138, and 140 in the master and slave chips 102, 106, 108, and110 including at least one memory bank, at least one bank group, and atleast one rank. Such examples of FIGS. 24, 28, 29, 33, 34, and 35illustrate efficient configuration of the internal data buses in themaster area 326 and the slave area 332 and capacity organization forpreventing data collision and minimizing number of interconnectstructures.

For example, FIGS. 31 and 39 illustrate less efficient capacityorganization compared to FIGS. 26 and 28 for when the three dimensionalmemory module 100 has one rank and multiple bank groups. Each of thechips 102, 106, 108, and 110 in FIGS. 26 and 28 has a respective one ofbanks A, B, C, and D formed entirely therein. In contrast, each of thechips 102, 106, 108, and 110 in FIGS. 31 and 39 has a respective set ofmultiple banks A, B, C, and D formed therein. Thus in FIG. 31, themaster chip 102 and the slave chip 106 both include bank A and bank Bportions, and the slave chips 108 and 110 both include bank C and bank Dportions.

Referring to FIG. 39, the master chip 102 includes first memory bank Aportions 802 with corresponding read sense amplifier and write driverunits 803 and first memory bank B portions 804 with corresponding readsense amplifier and write driver units 805, forming part of the firstbank group BG0 (shown outlined in dashed lines in FIG. 39). The masterchip 102 also includes second memory bank A portions 806 withcorresponding read sense amplifier and write driver units 807 and secondmemory bank B portions 808 with corresponding read sense amplifier andwrite driver units 809, forming part of the second bank group BG1 (shownoutlined in dashed lines in FIG. 39).

Further referring to FIG. 39, the slave chip 106 includes third memorybank A portions 812 with corresponding read sense amplifier and writedriver units 813 and third memory bank B portions 814 with correspondingread sense amplifier and write driver units 815, forming part of thefirst bank group BG0 (shown outlined in dashed lines in FIG. 39). Theslave chip 106 also includes fourth memory bank A portions 816 withcorresponding read sense amplifier and write driver units 817 and fourthmemory bank B portions 818 with corresponding read sense amplifier andwrite driver units 819, forming part of the second bank group BG1 (shownoutlined in dashed lines in FIG. 39).

Further referring to FIG. 39, the master chip 102 includes theserializer 266, the deserializer 270, a first gating unit 822, a secondgating unit 824, a third gating unit 826, and a fourth gating unit 828all connected to a first node 820. The first gating unit 822 controlsthe direction of signal transmission between the first node 820 andfirst TSVs 832. The second gating unit 824 controls the direction ofsignal transmission between the first node 820 and second TSVs 834. Thethird gating unit 826 controls the direction of signal transmissionbetween the first node 820 and third TSVs 836. The fourth gating unit828 controls the direction of signal transmission between the first node820 and fourth TSVs 838.

The master chip 102 of FIG. 39 also includes a fifth gating unit 830 forcontrolling the direction of signal transmission between the first TSVs832 and a first bank interconnect 831 connected to the first bank Aportions 802. Furthermore, a sixth gating unit 832 controls thedirection of signal transmission between the second TSVs 834 and asecond bank interconnect 833 connected to the first bank B portions 804.

Also, a seventh gating unit 834 controls the direction of signaltransmission between the third TSVs 836 and a third bank interconnect835 connected to the second bank A portions 806. An eighth gating unit836 controls the direction of signal transmission between the secondTSVs 838 and a fourth bank interconnect 837 connected to the second bankB portions 808.

The slave chip 106 of FIG. 39 also includes a ninth gating unit 838 forcontrolling the direction of signal transmission between the first TSVs832 and a fifth bank interconnect 839 connected to the third bank Aportions 812. Furthermore, a tenth gating unit 840 controls thedirection of signal transmission between the third TSVs 836 and a sixthbank interconnect 841 connected to the fourth bank A portions 816.

Furthermore in the slave chip 106 of FIG. 39, an eleventh gating unit842 controls the direction of signal transmission between the secondTSVs 834 and a seventh bank interconnect 843 connected to the third bankB portions 814. A twelfth gating unit 844 controls the direction ofsignal transmission between the fourth TSVs 838 and an eighth bankinterconnect 845 connected to the fourth bank B portions 818.

In FIG. 39, multiple TSVs 832 and 836 are formed for bank A portionsforming the multiple bank groups BG0 and BG1 formed in the chips 102 and106. Also, multiple TSVs 834 and 838 are formed for bank B portionsforming the multiple bank groups BG0 and BG1 formed in the chips 102 and106. Such separate TSVs are formed in FIG. 39 for bank group to bankgroup interleaving.

However comparing FIGS. 28 and 39, the capacity organization of FIG. 39results in more TSVs 832, 834, 836, and 838 in FIG. 39 than the TSVs 542and 544 in FIG. 28. Additionally, the capacity organization of FIG. 39results in more gating units 822, 824, 826, 828, 830, 832, 834, 836,838, 840, 842, and 844 than the gating units 328, 330, 546, 548, 554,and 556 in FIG. 28. Thus, the capacity organization of FIG. 28 is moreefficient than the capacity organization of FIG. 39 for forming themultiple bank groups BG0 and BG1.

In another example, FIGS. 32 and 40 illustrate a different capacityorganization compared to FIGS. 27 and 29 for the three dimensionalmemory module 100 having one bank group and multiple ranks. FIG. 27shows a respective rank being formed entirely within each of the chips102, 106, 108, and 110. In contrast, FIG. 32 shows each rank beingformed with respective bank A, B, C, and D portions vertically throughall of the chips 102, 106, 108, and 110. Also in FIG. 27, each of thechips has respective bank A, B, C, and D portions. In contrast in FIG.32, each of the memory banks A, B, C, and D are formed entirely in arespective one of the chips 102, 106, 108, and 110.

Thus in FIG. 40, the master chip 102 includes first memory bank Aportions 902 with corresponding read sense amplifier and write driverunits 903 forming part of the first rank 952 (shown outlined in dashedlines in FIG. 40). The master chip 102 also includes second memory bankA portions 904 with corresponding read sense amplifier and write driverunits 905 forming part of the second rank 954 (shown outlined in dashedlines in FIG. 40).

The master chip 102 further includes third memory bank A portions 906with corresponding read sense amplifier and write driver units 907forming part of the third rank 956 (shown outlined in dashed lines inFIG. 40). The master chip 102 also includes fourth memory bank Aportions 908 with corresponding read sense amplifier and write driverunits 909 forming part of the fourth rank 958 (shown outlined in dashedlines in FIG. 40).

Further in FIG. 40, the slave chip 106 includes first memory bank Bportions 912 with corresponding read sense amplifier and write driverunits 913 forming part of the first rank 952. The slave chip 106 alsoincludes second memory bank B portions 914 with corresponding read senseamplifier and write driver units 915 forming part of the second rank954. The slave chip 106 further includes third memory bank B portions916 with corresponding read sense amplifier and write driver units 917forming part of the third rank 956. The slave chip 106 also includesfourth memory bank B portions 918 with corresponding read senseamplifier and write driver units 919 forming part of the fourth rank958.

Also referring to FIG. 40, the master chip 102 includes the serializer266, the deserializer 270, first gating units 920 and 922 coupled to thedeserializer 270 at a first node 923, and second gating units 924 and926 coupled to the serializer 266 at a second node 927. The first gatingunits 920 and 922 determine which one of first and second write TSVs 932and 934 has write data from the deserializer 270 applied thereon. Thesecond gating units 924 and 926 determine which one of first and secondread TSVs 936 and 938 is connected to the serializer 266 that serializesrespective read data on such a selected one of the read TSVs.

Further referring to FIG. 40, a third gating unit 942 controls couplingof one of the read TSVs 936 and the write TSVs 932 to a first bankinterconnect 944 connected to the bank A portions 902. A fourth gatingunit 946 controls coupling of one of the read TSVs 936 and the writeTSVs 932 to a second bank interconnect 948 connected to the bank Aportions 904. A fifth gating unit 950 controls coupling of one of theread TSVs 938 and the write TSVs 934 to a third bank interconnect 952connected to the bank A portions 906. A sixth gating unit 954 controlscoupling of one of the read TSVs 938 and the write TSVs 934 to a fourthbank interconnect 956 connected to the bank A portions 908.

Also referring to FIG. 40, a seventh gating unit 958 controls couplingof one of the read TSVs 936 and the write TSVs 932 to a fifth bankinterconnect 960 connected to the bank B portions 952. An eighth gatingunit 962 controls coupling of one of the read TSVs 936 and the writeTSVs 932 to a sixth bank interconnect 964 connected to the bank Bportions 914. A ninth gating unit 966 controls coupling of one of theread TSVs 938 and the write TSVs 934 to a seventh bank interconnect 968connected to the bank B portions 916. A tenth gating unit 970 controlscoupling of one of the read TSVs 938 and the write TSVs 934 to an eighthbank interconnect 972 connected to the bank B portions 918.

Comparing FIGS. 29 and 40, the number of TSVs 936, 932, 934, and 938 inFIG. 40 is similar to the number of TSVs 592, 596, 598, and 594 of FIG.29. In addition, the number of gating units 920, 922, 924, 926, 942,946, 952, 954, 958, 962, 966, and 970 in FIG. 40 is similar to thenumber of gating units 584, 586, 580, 582, 602, 606, 610, 614, 618, 622,626, and 630 in FIG. 29. Thus, the capacity organization of FIGS. 32 and40 has similar efficiency to the capacity organization of FIGS. 27 and29 for forming multiple ranks in the three dimensional memory module100.

The foregoing is by way of example only and is not intended to belimiting. For example, any number of elements as illustrated anddescribed herein is by way of example only. The present invention islimited only as defined in the following claims and equivalents thereof.

1. A three dimensional memory system comprising: a first type chip; aplurality of second type chips stacked with the first type chip; throughelectrodes formed through at least one of the second type chips; a firstsignal path disposed on the first type chip; and a respective secondsignal path disposed on each second type chip, wherein the first signalpath is coupled to the respective second signal paths via the throughelectrodes, and wherein the first signal path is along at least onefirst interconnect structure fabricated on a first semiconductorsubstrate between a circuit of the first type chip and a throughelectrode, and wherein the second signal path is along at least onesecond interconnect structure fabricated on a second semiconductorsubstrate of the second type chip between said through electrode and amemory bank of the second type chip, and wherein a first length of thefirst interconnect structure is greater than the second length of thesecond interconnect structure.
 2. The three dimensional memory system ofclaim 1, wherein the first type chip is a master chip, and wherein theplurality of the second type chips are a plurality of slave chipsstacked with the master chip.
 3. The three dimensional memory system ofclaim 2, wherein the first signal path is for transmitting a firstsignal from an external source through the master chip, and wherein thesecond signal path is for transmitting a second signal from one of thethrough electrodes to the slave chip.
 4. The three dimensional memorysystem of claim 1, wherein the first length of the first interconnectstructure is at least two times greater than the second length of thesecond interconnect structure.
 5. The three dimensional memory system ofclaim 1, wherein said circuit fabricated on the first type chip is forprocessing signals within the first type chip.
 6. The three dimensionalmemory system of claim 1, wherein said circuit fabricated on the firsttype chip includes one of a control logic, an address register, a dataserializier, or a data deserializer.
 7. The three dimensional memorysystem of claim 1, wherein the first type chip is a master chip having amaster memory core.
 8. The three dimensional memory system of claim 7,wherein the second type chips are a plurality of slave chips stackedwith the master chip, and wherein each of the slave chips has arespective slave memory core.
 9. The three dimensional memory system ofclaim 1, wherein the second type chips are a plurality of slave chipsstacked with the first type chip, and wherein each of the slave chipshas a respective slave memory core.